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(a) variation in the thicknesses of Ge and Sb films as a function of the number of cycles and (b) variation in the Sb concentration as a function of the cycle ratio.
Cross-section TEM images of the film grown with the sequence of (a) Ge(20)–Sb–Ge(2)–Sb–Ge(4)–Sb–Ge(6)–Sb and (b) Ge(20)–Sb–Ge(8)–Sb–Ge(10)–Sb–Ge(15)–Sb, where the number in parenthesis shows the Ge cycle number. The number of Sb cycles was fixed to 20. (c) Changes in resistivity of the Ge–Sb alloy as a function of the cycle ratio.
(a) Relaxed structure of Ge-doped Sb and (b) The DOS for the crystalline and Ge-doped Sb.
(a) Changes in the sheet resistance of the Ge–Sb film as a function of the annealing temperature (30 s in air) and (b) x-ray diffraction pattern of the films. In (a) the data for sputtered is also shown for comparison.
Deposition conditions. (SCCM denotes standard cubic centimeters per minute at STP.)
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