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Change in the resistivity of Ge-doped Sb phase change thin films grown by chemical vapor deposition according to their microstructures
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10.1063/1.3151959
/content/aip/journal/apl/94/22/10.1063/1.3151959
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/22/10.1063/1.3151959

Figures

Image of FIG. 1.
FIG. 1.

(a) variation in the thicknesses of Ge and Sb films as a function of the number of cycles and (b) variation in the Sb concentration as a function of the cycle ratio.

Image of FIG. 2.
FIG. 2.

Cross-section TEM images of the film grown with the sequence of (a) Ge(20)–Sb–Ge(2)–Sb–Ge(4)–Sb–Ge(6)–Sb and (b) Ge(20)–Sb–Ge(8)–Sb–Ge(10)–Sb–Ge(15)–Sb, where the number in parenthesis shows the Ge cycle number. The number of Sb cycles was fixed to 20. (c) Changes in resistivity of the Ge–Sb alloy as a function of the cycle ratio.

Image of FIG. 3.
FIG. 3.

(a) Relaxed structure of Ge-doped Sb and (b) The DOS for the crystalline and Ge-doped Sb.

Image of FIG. 4.
FIG. 4.

(a) Changes in the sheet resistance of the Ge–Sb film as a function of the annealing temperature (30 s in air) and (b) x-ray diffraction pattern of the films. In (a) the data for sputtered is also shown for comparison.

Tables

Generic image for table
Table I.

Deposition conditions. (SCCM denotes standard cubic centimeters per minute at STP.)

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/content/aip/journal/apl/94/22/10.1063/1.3151959
2009-06-05
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Change in the resistivity of Ge-doped Sb phase change thin films grown by chemical vapor deposition according to their microstructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/22/10.1063/1.3151959
10.1063/1.3151959
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