Full text loading...
A plane-view SEM image of electrochemically etched . The inset shows a magnified image of the same sample.
Cross-sectional SEM images of an layer sandwiched by undoped GaN layers after lateral electrochemical etching. The etching voltage was 40 V [(a) and (b)], 50 V [(c) and (d)], 70 V [(e) and (f)]. The doping concentration of the was [(a), (c) and (f)], [(b), (d), and (f)].
(a) A schematic drawing of the etching profile along the direction of etching propagation. The cross-sectional images were taken on the planes marked B (b), C (c), and D (d).
The dependence of the etch rate on the applied voltage.
A SEM image of GaN squares detached from the substrate by electrochemical etching.
Article metrics loading...