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Doping selective lateral electrochemical etching of GaN for chemical lift-off
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10.1063/1.3153116
/content/aip/journal/apl/94/22/10.1063/1.3153116
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/22/10.1063/1.3153116
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A plane-view SEM image of electrochemically etched . The inset shows a magnified image of the same sample.

Image of FIG. 2.
FIG. 2.

Cross-sectional SEM images of an layer sandwiched by undoped GaN layers after lateral electrochemical etching. The etching voltage was 40 V [(a) and (b)], 50 V [(c) and (d)], 70 V [(e) and (f)]. The doping concentration of the was [(a), (c) and (f)], [(b), (d), and (f)].

Image of FIG. 3.
FIG. 3.

(a) A schematic drawing of the etching profile along the direction of etching propagation. The cross-sectional images were taken on the planes marked B (b), C (c), and D (d).

Image of FIG. 4.
FIG. 4.

The dependence of the etch rate on the applied voltage.

Image of FIG. 5.
FIG. 5.

A SEM image of GaN squares detached from the substrate by electrochemical etching.

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/content/aip/journal/apl/94/22/10.1063/1.3153116
2009-06-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Doping selective lateral electrochemical etching of GaN for chemical lift-off
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/22/10.1063/1.3153116
10.1063/1.3153116
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