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Linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers
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10.1063/1.3148673
/content/aip/journal/apl/94/23/10.1063/1.3148673
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/23/10.1063/1.3148673
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Top view image of the APSRL (Type B). (b) Layer structure of the cross section of APSRL across the active medium.

Image of FIG. 2.
FIG. 2.

P-I characteristic of the APSRL device (B type). The insets show the optical spectra at pumping current 135 and 180 mA. The measured mode-spacing in left inset is 0.035 nm, which exactly corresponds to the spacing of the longitudinal cavity modes. We carried out the continuous wave operation at .

Image of FIG. 3.
FIG. 3.

(a) rf spectrum data of self-beating of the laser output from the self-heterodyne interferometer measurement in case of A type (short blue dash line), B type (red long-dash line), and C type (black line). (b) The measured linewidth (closed circle) and theoretical expectation values (solid line) of APSRLs vs the length of the passive cavity waveguide.

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/content/aip/journal/apl/94/23/10.1063/1.3148673
2009-06-09
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/23/10.1063/1.3148673
10.1063/1.3148673
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