1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Ultrashort dead time of photon-counting InGaAs avalanche photodiodes
Rent:
Rent this article for
USD
10.1063/1.3151864
/content/aip/journal/apl/94/23/10.1063/1.3151864
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/23/10.1063/1.3151864
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental verification of the ultrashort detector dead time at a detector gating clock of 1.036 GHz using a double pulse method as schematically shown in the inset of (a). (a) Single shot output of an SD-APD recorded by an oscilloscope, displaying detection of both optical pulses separated by 1.93 ns. (b) Probabilities for detecting the first pulse , the second , and both simultaneously . Also shown is product of and . The lines show the theoretical calculation using a detection efficiency of 10%, assuming no influence from detector dead time. (c) Joint detection probability as a function of the time delay between the two pulses. The illumination intensity corresponds to a single pulse detection probability of 0.36.

Image of FIG. 2.
FIG. 2.

Experimental and calculated count rates vs incident photon flux. The dashed line shows the dead time limited count rate.

Image of FIG. 3.
FIG. 3.

Configuration for the second order correlation measurement of a pulsed source with a single detector. Before the time acquisition card (TAC), a demultiplexer (Demux) is used to separate electrical signals due to photons that passed through different paths of the asymmetric Mach–Zender interferometer.

Image of FIG. 4.
FIG. 4.

Second order correlation function measurements by a single detector HBT configuration shown in Fig. 3 for a semiconductor diode laser pulsed at 125 MHz. (a) Laser output power as a function of driving pulse voltage. (b) measured for the diode biased at 1.5 V. (c) measured for a spectrally filtered mode of the diode biased at the lasing threshold.

Loading

Article metrics loading...

/content/aip/journal/apl/94/23/10.1063/1.3151864
2009-06-09
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrashort dead time of photon-counting InGaAs avalanche photodiodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/23/10.1063/1.3151864
10.1063/1.3151864
SEARCH_EXPAND_ITEM