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Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres
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10.1063/1.3152012
/content/aip/journal/apl/94/23/10.1063/1.3152012
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/23/10.1063/1.3152012
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional SEM image showing a smooth, fully coalesced GaN film grown through a monolayer of silica spheres GaN/sapphire substrates.

Image of FIG. 2.
FIG. 2.

Typical AFM scans showing the surface morphology of GaN regrown without (a) and with (b) the use of silica microspheres.

Image of FIG. 3.
FIG. 3.

TDD in GaN layers as a function of silica sphere diameter.

Image of FIG. 4.
FIG. 4.

Cross-sectional TEM image showing dislocations (dark vertical lines) bending toward spheres and terminating at the interface leaving a low TDD area above the spheres.

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/content/aip/journal/apl/94/23/10.1063/1.3152012
2009-06-08
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/23/10.1063/1.3152012
10.1063/1.3152012
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