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Cross-sectional SEM image showing a smooth, fully coalesced GaN film grown through a monolayer of silica spheres GaN/sapphire substrates.
Typical AFM scans showing the surface morphology of GaN regrown without (a) and with (b) the use of silica microspheres.
TDD in GaN layers as a function of silica sphere diameter.
Cross-sectional TEM image showing dislocations (dark vertical lines) bending toward spheres and terminating at the interface leaving a low TDD area above the spheres.
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