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Cross-sectional SEM images of the (100) Si surface etched in (a) colloidal Au solution for 900 s, with arrows indicating nanopores entering the (011) cleavage plane. (b) solution for 80 s, with dashed lines indicating extrema of the density-grade depth found by computerized pixel correlation analysis. Inset to (b) is dark-field TEM (100-nm scalebar) of a nanopore and Au particle (indicated by arrow) produced by solution etching.
Reflectance spectra taken after etching in black-etch solution for 80 s [SEM of Fig. 1(b)] and other times, as indicated; additional spectrum taken after 900 s etch in colloidal Au solution [SEM of Fig. 1(a)]. Inset shows at indicated wavelengths, normalized to the polished wafer , vs density-grade depth, .
Reflectance of Si after solution etches lasting 10–90 s (10 s intervals). Each curve is labeled by its density-grade depth. is normalized to polished wafer and plotted vs scaled by . Due to light scattering, blue tails of each curve are not included in the exponential fit (solid line) to the rest of the data.
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