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Improving emission enhancement in surface plasmon coupling with an InGaN/GaN quantum well by inserting a dielectric layer of low refractive index between metal and semiconductor
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10.1063/1.3153506
/content/aip/journal/apl/94/23/10.1063/1.3153506
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/23/10.1063/1.3153506
/content/aip/journal/apl/94/23/10.1063/1.3153506
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/content/aip/journal/apl/94/23/10.1063/1.3153506
2009-06-10
2014-08-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improving emission enhancement in surface plasmon coupling with an InGaN/GaN quantum well by inserting a dielectric layer of low refractive index between metal and semiconductor
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/23/10.1063/1.3153506
10.1063/1.3153506
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