1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
f
Electrical stability of inkjet-patterned organic complementary inverters measured in ambient conditions
Rent:
Rent this article for
Access full text Article
/content/aip/journal/apl/94/23/10.1063/1.3153510
1.
1.S. H. Han, S. M. Cho, J. H. Kim, J. W. Choi, J. Jang, and M. H. Oh, Appl. Phys. Lett. 89, 093504 (2006);
http://dx.doi.org/10.1063/1.2338526
1.H. Klauk, U. Zschieschang, J. Pflaum, and M. Halik, Nature (London) 445, 745 (2007);
http://dx.doi.org/10.1038/nature05533
1.T. B. Singh, P. Senkarabacak, N. S. Sariciftci, A. Tanda, C. Lackner, R. Hagelauer, and G. Horowitz, Appl. Phys. Lett. 89, 033512 (2006);
http://dx.doi.org/10.1063/1.2235947
1.A. Dodabalapur, J. Laquindanum, H. E. Katz, and Z. Bao, Appl. Phys. Lett. 69, 4227 (1996);
http://dx.doi.org/10.1063/1.116953
1.S. De Vusser, S. Steudel, K. Myny, J. Genoe, and P. Heremans, Appl. Phys. Lett. 88, 162116 (2006);
http://dx.doi.org/10.1063/1.2197604
1.H. Yan, Y. Zheng, R. Blache, C. Newman, S. Lu, J. Woerle, and A. Facchetti, Adv. Mater. (Weinheim, Ger.) 20, 3393 (2008);
http://dx.doi.org/10.1002/adma.200800629
1.D. M. Binkley, N. Verma, R. L. Crawford, E. Brandon, and T. N. Jackson, Proc. SPIE 5522, 41 (2004);
http://dx.doi.org/10.1117/12.559934
1.S. Tatemichi, M. Ichikawa, S. Kato, T. Koyama, and Y. Taniguchi, Phys. Status Solidi (RRL) 2, 47 (2008).
http://dx.doi.org/10.1002/pssr.200701267
2.
2.I. McCulloch, M. Heeney, C. Bailey, K. Genevicius, I. MacDonald, M. Shkunov, D. Sparrowe, S. Tierney, R. Wagner, W. Zhang, M. L. Chabinyc, R. J. Kline, M. D. McGehee, and M. F. Toney, Nature Mater. 5, 328 (2006).
http://dx.doi.org/10.1038/nmat1612
3.
3.H. Yan, Z. Chen, Y. Zheng, C. R. Newman, J. R. Quinn, F. Dolz, M. Kastler, and A. Facchetti, Nature (London) 457, 679 (2009).
http://dx.doi.org/10.1038/nature07727
4.
4.H. Sirringhaus, T. Kawase, R. H. Friend, T. Shimoda, M. Inbasekaran, W. Wu, and E. P. Woo, Science 290, 2123 (2000);
http://dx.doi.org/10.1126/science.290.5499.2123
4.K. E. Paul, W. S. Wong, S. E. Ready, and R. A. Street, Appl. Phys. Lett. 83, 2070 (2003);
http://dx.doi.org/10.1063/1.1609233
4.A. C. Arias, S. E. Ready, R. Lujan, W. S. Wong, K. E. Paul, A. Salleo, M. L. Chabinyc, R. Apte, R. A. Street, Y. Wu, P. Liu, and B. Ong, Appl. Phys. Lett. 85, 3304 (2004);
http://dx.doi.org/10.1063/1.1801673
4.J. Daniel, A. C. Arias, W. S. Wong, R. Lujan, S. Ready, B. Krusor, and R. A. Street, Jpn. J. Appl. Phys. 46, 1363 (2007).
http://dx.doi.org/10.1143/JJAP.46.1363
5.
5.H. Yan, Y. Zheng, S. Lu, and A. Facchetti, Proceedings of the Organic Semiconductor Conference, 2009 (unpublished).
6.
6.W. S. Wong, S. E. Ready, J. -P. Lu, and R. A. Street, IEEE Electron Device Lett. 24, 577 (2003).
http://dx.doi.org/10.1109/LED.2003.815939
7.
7.J. Veres, S. Ogier, G. Lloyd, and D. de Leeuw, Chem. Mater. 16, 4543 (2004).
http://dx.doi.org/10.1021/cm049598q
8.
8.T. Richards, M. Bird, and H. Sirringhaus, J. Chem. Phys. 128, 234905 (2008).
http://dx.doi.org/10.1063/1.2937729
9.
9.Y. Iino, Y. Inoue, Y. Fujisaki, H. Fujikake, H. Sato, M. Kawakita, S. Tokito, and H. Kikuchi, Jpn. J. Appl. Phys., Part 1 42, 299 (2003).
http://dx.doi.org/10.1143/JJAP.42.299
10.
10.A. C. Arias, J. Daniel, B. Krusor, S. Ready, V. Sholin, and R. A. Street, SID J. 15, 485 (2007);
10.V. Sholin, S. A. Carter, R. A. Street, and A. C. Arias, Appl. Phys. Lett. 92, 063307 (2008).
http://dx.doi.org/10.1063/1.2857461
11.
11.No significant contact resistance is observed in the linear part (low ) of the output plots, indicating that the printed Ag contacts are sufficient for both hole and electron injection into the semiconductors.
12.
12.A. Salleo and R. A. Street, J. Appl. Phys. 94, 471 (2003).
http://dx.doi.org/10.1063/1.1581352
13.
13.J. E. Northrup and M. L. Chabinyc, Phys. Rev. B 68, 041202 (2003).
http://dx.doi.org/10.1103/PhysRevB.68.041202
14.
14.M. L. Chabinyc, F. Endicott, B. D. Vogt, D. M. DeLongchamp, E. K. Lin, Y. Wu, P. Liu, and B. S. Ong, Appl. Phys. Lett. 88, 113514 (2006).
http://dx.doi.org/10.1063/1.2181206
15.
15.K. Puntambekar, J. Dong, G. Haugstad, and C. D. Frisbie, Adv. Funct. Mater. 16, 879 (2006).
http://dx.doi.org/10.1002/adfm.200500816
16.
16.T. N. Ng, J. A. Marohn, and M. L. Chabinyc, J. Appl. Phys. 100, 084505 (2006).
http://dx.doi.org/10.1063/1.2358410
17.
17.T. N. Ng, J. H. Daniel, S. Sambandan, A. C. Arias, M. L. Chabinyc, and R. A. Street, J. Appl. Phys. 103, 044506 (2008).
http://dx.doi.org/10.1063/1.2884535
18.
18.S. Sambandan and R. A. Street, IEEE Electron Device Lett. 30, 45 (2009).
http://dx.doi.org/10.1109/LED.2008.2009010
19.
19.S. De Vusser, J. Genoe, and P. Heremans, IEEE Trans. Electron Devices 53, 601 (2006).
http://dx.doi.org/10.1109/TED.2006.870876
20.
20.R. A. Street, M. L. Chabinyc, F. Endicott, and B. Ong, J. Appl. Phys. 100, 114518 (2006).
http://dx.doi.org/10.1063/1.2398798
21.
journal-id:
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/23/10.1063/1.3153510
Loading
View: Figures

Figures

Image of FIG. 1.

Click to view

FIG. 1.

(a) Schematic and cross-sectional views of an organic inverter structure and chemical structure of the semiconductors PBTTT (-channel) and ActivInk N1400 (-channel). (b) Representative transfer and output characteristics of the complementary OTFTs.

Image of FIG. 2.

Click to view

FIG. 2.

(a) Optical pictures of inkjet-patterned inverters with gates patterned by inkjet-printed mask (top) and with unpatterned gates (bottom). (b) Inverter output characteristics and corresponding gain at various . (c) Inverter output obtained from a square input wave of 10 kHz with . (d) Inverter output/input amplitude vs input frequency. The capacitance load for (c) and (d) is 0.02 pF.

Image of FIG. 3.

Click to view

FIG. 3.

(a) Shift in the inverter transfer characteristics with operation time. (b) Relative current decay for the complementary semiconductors. (c) Threshold-voltage shifts measured after applying and input voltage of for 15 and 20 min with . The source-drain voltage is at for the transfer characteristics. (d) Transfer characteristics and noise margins (NM) for complementary inverter at before (red solid line) and after (dashed gray line) electrical bias stress. The after-stress noise margins were estimated from the pulsed conditions of Ref. 20.

Loading

Article metrics loading...

/content/aip/journal/apl/94/23/10.1063/1.3153510
2009-06-10
2014-04-25

Abstract

Complementary organic inverters were fabricated by inkjet patterning of both the metal contacts and the semiconductors. Bottom-gate, bottom-contact organic thin-film transistors with -polymer bilayer dielectrics, inkjet-printed silver electrodes, and inkjet-printed organic semiconductors exhibit hole and electron mobilities as high as . Complementary inverters based on these transistors operate in ambient and exhibit a gain of −4.4 with supply voltage and −3 dB cutoff at 100 kHz with a load of 0.02 pF. The electrical stability of the inverters was evaluated for analog and digital operation, and a noise margin at was measured with bias-stress effects included.

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/94/23/1.3153510.html;jsessionid=1dmvfk6fe67zh.x-aip-live-06?itemId=/content/aip/journal/apl/94/23/10.1063/1.3153510&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true
This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical stability of inkjet-patterned organic complementary inverters measured in ambient conditions
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/23/10.1063/1.3153510
10.1063/1.3153510
SEARCH_EXPAND_ITEM