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Improving field emission properties of GaN nanowires by oxide coating
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10.1063/1.3154564
/content/aip/journal/apl/94/24/10.1063/1.3154564
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/24/10.1063/1.3154564
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Figures

Image of FIG. 1.
FIG. 1.

SEM images of (a) , (b) GaN, (c) GaN coated , and (d) coated GaN nanowires, synthesized by VLS growth methods on the Au-coated Si substrate. Scale bar: .

Image of FIG. 2.
FIG. 2.

(a) Field emission current density-electric field curves (inset: SEM image of an individual GaN nanowire attached at tip for field emission measurement) and (b) the corresponding FN plots, measured for individual nanowire at a fixed separation between cathode and anode for GaN, , GaN coated and coated GaN nanowires.

Image of FIG. 3.
FIG. 3.

Schematic band diagram of GaN and nanowires decorated by and GaN particles, respectively. Work function was defined as the sum of electron affinity and the energy between Fermi level and conducting band minima.

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/content/aip/journal/apl/94/24/10.1063/1.3154564
2009-06-16
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improving field emission properties of GaN nanowires by oxide coating
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/24/10.1063/1.3154564
10.1063/1.3154564
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