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Ultrafast photodetection in an all-silicon chip enabled by two-photon absorption
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10.1063/1.3155135
/content/aip/journal/apl/94/24/10.1063/1.3155135
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/24/10.1063/1.3155135
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of an on-chip integration of the photodetection scheme considered in this work. An arbitrary train of ultrafast light pulses is converted into an electric binary code (represented as a set of 1’s and 0’s). Panels (b) and (c) display two different designs analyzed in this manuscript, based on a ring resonator and a PC cavity, respectively. Yellow regions in both figures correspond to Si areas. In (b), , , and ; while in (c) the radius of the holes and the periodicity of the lattice are 90 and 330 nm, respectively. The electric and magnetic field profiles [pointing in the direction perpendicular to the page, see (b) and (c), respectively] for each structure are also shown; red (blue) correspond to the maximum (minimum) value of the corresponding field. Panels (b) and (c) also render possible configurations for the junction embedded in each structure.

Image of FIG. 2.
FIG. 2.

(a)–(c) display the time evolution of the input power , absorbed power , and the variation of the refractive index of the microresonator , respectively, induced by a continuous train of 0.25 ns pulses illuminating the system shown in Fig. 1(c). is assumed in these calculations. Panels (d), (e), and (f) have same magnitudes as in (a), (b), and (c), respectively, but now the external excitation consists in a pseudorandom train of pulses and the carrier frequency has been preshifted with respect to the resonant frequency of the microresonator. Inset of each panel shows an enlarged view of the yellow shaded area of the corresponding main figure.

Image of FIG. 3.
FIG. 3.

Panels (a) and (b) show the ratio between the absorbed and the input energy for the PC microcavity displayed in Fig. 1(c), operating at 1 and 10 Gbps, respectively. The results for each bit rate have been computed assuming the maximum possible value of the factor that allows the considered bit rate. Panels (c) and (d) render the same magnitudes as (a) and (b), but in this case computed for the ring resonator structure shown in Fig. 1(b). Panels (e) and (f) display the results for the optimal efficiency and the optimal energy per bit [indicated as dashed green lines in panels (a)–(d)] as a function of the corresponding bit rate. Red and black dots correspond to the structures of Figs. 1(c) and 1(b), respectively.

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/content/aip/journal/apl/94/24/10.1063/1.3155135
2009-06-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrafast photodetection in an all-silicon chip enabled by two-photon absorption
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/24/10.1063/1.3155135
10.1063/1.3155135
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