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Direct measurement of transient electric fields induced by ultrafast pulsed laser irradiation of silicon
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Image of FIG. 1.
FIG. 1.

A schematic diagram of the experimental setup. The probe electron beam is above the sample at a glancing angle, . The position of the electron beam relative to the laser pump beam and their sizes are illustrated inside the dashed circle.

Image of FIG. 2.
FIG. 2.

(a) Temporal evolution of electron shadow image. Each image is averaged over 140 shots. The image size is and the dimension of each pixel is . The dash line indicates the initial electron beam position. (b) Composite image of the vertical electron probe intensity profile (vertical) as a function of the delay (horizontal). The scale indicates the angle in degrees. (c) Vertical intensity profiles of the electron beam at 0 and 100 ps. The excitation laser fluence used here was .

Image of FIG. 3.
FIG. 3.

Vertical electron beam deflection as a function of delay time in degrees. This graph was obtained by fitting the profiles of electron beam intensity using a Gaussian function. The solid lines are fitting result of simple model calculation using Eq. (3). The time zero point was determined from the fitting result of experimental data.


Generic image for table
Table I.

A summary of parameters used to fit Fig. 3 based on the model of Eq. (3). The surface charge density is obtained based on scaling of Eq. (2).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct measurement of transient electric fields induced by ultrafast pulsed laser irradiation of silicon