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For sample P5: (a) in-plane magnetization (normalized to the magnetic saturation ) at . Circles are for the major loop and the black lines for the virgin curves. Upper-left: typical scanning electron microscopy of the nanodot arrays. Lower-right: cartoon of the magnetic reversal mechanism. (b) Measured longitudinal and (c) transverse resistances vs applied magnetic field at and . Same symbols/line code as in (a). Insets in [(b) and (c)]: sketch of the electrical contact configurations.
For sample P5: [(a)–(d)] pure transverse resistance as a function of the applied field at for different current levels . Solid (hollow) circles are for the major loop (measured from positive/negative saturation), black lines for the virgin curves. (e) Pure transverse resistance as a function of normalized longitudinal resistance ( normal-state resistance). Same data and symbols/line code as in [(a)–(d)]. Curves for different , 31.25, 43.75, and are shifted from bottom to top in steps of . Inset: zoom of the curve for . The arrows show the sense of circulation for the curve measured from . The stars labeled 1 and 2 identify the corresponding data points in (a).
(a) Computed transverse vs longitudinal resistance (both normalized to the -state longitudinal resistance), for an array with ( resistors). The inset shows a sketch of the model for (voltage probes labeled A–D). (b) Maximum transverse resistance (normalized to the -state longitudinal one) vs size of the resistor array model.
Samples parameters; Al film thickness , dot diameters and interdot distances , critical temperatures , -state resistance , sign of the transverse resistance (± appears when both are observed), and ratio between the maximum transverse and the -state resistances .
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