Full text loading...
(a) Schematic of devices and the measurement setup. (b). Resistance switching under pulsed cycles for a Ti/PCMO/Pt device.
characteristics for (a) Ag, Cu, Au, Pt/PCMO /Pt, (b) Al/PCMO/Pt, (c) Ti/PCMO/Pt, and (d) Ta/PCMO/Pt. The data was taken with bias looped from . There are six consecutive loops for (b), (c), and (d), and label-1 marks the first loop, and six is the last. The size of the loop reduces progressively from one to six. Label-F marks the forming process. Inset of (b), (c), or (d) shows the blow up of the hysteresis loop at positive bias.
(a) VR vs work function. The data of each TE material is an average over 100 devices, and small error bars indicate that these devices are quite uniform. The dashed line marks the work function of PCMO. (b) VR vs metal-oxide formation free energy taken from Refs. 14 and 15. The dashed line at −366 kJ/mol. indicates the oxidation free energy of PCMO from Ref. 16.
HRTEM images of interfaces between top electrodes and PCMO. (a) Pt/PCMO, (b) Al/PCMO, (c) Ti/PCMO, and (d) Ta/PCMO. All figures have the same scale shown in (d).
Article metrics loading...