1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
f
Very high magnetocurrent in tris-(8-hydroxyquinoline) aluminum-based bipolar charge injection devices
Rent:
Rent this article for
Access full text Article
/content/aip/journal/apl/94/25/10.1063/1.3159825
1.
1.E. Frankevich, A. Zhakhidov, K. Yoshino, Y. Maruyama, and K. Yakushi, Phys. Rev. B 53, 4498 (1996).
http://dx.doi.org/10.1103/PhysRevB.53.4498
2.
2.M. Ahlskog and M. Reghu, J. Phys.: Condens. Matter 10, 833 (1998).
http://dx.doi.org/10.1088/0953-8984/10/4/012
3.
3.E. L. Frankevich, A. A. Lymarev, I. Sokolik, F. E. Karasz, S. Blumstengel, R. H. Baughman, and H. H. Hörhold, Phys. Rev. B 46, 9320 (2002).
http://dx.doi.org/10.1103/PhysRevB.46.9320
4.
4.T. L. Francis, Ö. Mermer, G. Veeraraghavan, and M. Wohlgenannt, New J. Phys. 6, 185 (2004).
http://dx.doi.org/10.1088/1367-2630/6/1/185
5.
5.M. S. Meruvia, A. R. V. Benvenho, I. A. Hümmelgen, J. A. Gómez, C. F. O. Graeff, R. W. C. Li, L. H. J. M. C. Aguiar, and J. Gruber, Phys. Status Solidi A 202, R158 (2005).
http://dx.doi.org/10.1002/pssa.200521270
6.
6.Ö. Mermer, G. Veeraraghavan, T. L. Francis, Y. Sheng, D. T. Nguyen, M. Wohlgenannt, A. Köhler, M. K. Al-Suti, and M. S. Khan, Phys. Rev. B 72, 205202 (2005).
http://dx.doi.org/10.1103/PhysRevB.72.205202
7.
7.M. S. Meruvia, A. R. V. Benvenho, I. A. Hümmelgen, R. W. C. Li, L. H. J. M. C. Aguiar, and J. Gruber, Solid State Commun. 139, 27 (2006).
http://dx.doi.org/10.1016/j.ssc.2006.05.005
8.
8.Y. Wu and B. Hu, Appl. Phys. Lett. 89, 203510 (2006).
http://dx.doi.org/10.1063/1.2387118
9.
9.Y. Sheng, T. D. Nguyen, G. Veeraraghavan, Ö. Mermer, M. Wohlgenannt, S. Qiu, and U. Scherf, Phys. Rev. B 74, 045213 (2006).
http://dx.doi.org/10.1103/PhysRevB.74.045213
10.
10.M. S. Meruvia, J. A. Freire, I. A. Hümmelgen, J. Gruber, and C. F. O. Graeff, Org. Electron. 8, 695 (2007).
http://dx.doi.org/10.1016/j.orgel.2007.05.007
11.
11.U. Niedermeier, M. Vieth, R. Pätzold, W. Sarfert, and H. von Seggern, Appl. Phys. Lett. 92, 193309 (2008).
http://dx.doi.org/10.1063/1.2924765
12.
12.E. L. Frankevich, E. I. Balanov, and G. V. V. Vselyubskaya, Sov. Phys. Solid State 8, 1567 (1966);
12.E. L. Frankevich, Sov. Phys. JETP 23, 814 (1966).
13.
13.J. Kalinowski, M. Cocchi, D. Virgili, P. Di Marco, and V. Fattori, Chem. Phys. Lett. 380, 710 (2003).
http://dx.doi.org/10.1016/j.cplett.2003.09.086
14.
14.A. H. Davis and K. Bussmann, J. Vac. Sci. Technol. A 22, 1885 (2004).
http://dx.doi.org/10.1116/1.1759347
15.
15.Ö. Mermer, G. Veeraraghavan, T. L. Francis, and M. Wohlgenannt, Solid State Commun. 134, 631 (2005).
http://dx.doi.org/10.1016/j.ssc.2005.02.044
16.
16.P. Desai, P. Shakya, T. Kreouzis, and W. P. Gillin, J. Appl. Phys. 102, 073710 (2007).
http://dx.doi.org/10.1063/1.2787158
17.
17.T. D. Nguyen, Y. Sheng, J. Rybicki, and M. Wohlgenannt, Phys. Rev. B 77, 235209 (2008).
http://dx.doi.org/10.1103/PhysRevB.77.235209
18.
18.V. N. Prigodin, J. D. Bergeson, D. M. Lincoln, and A. J. Epstein, Synth. Met. 156, 757 (2006).
http://dx.doi.org/10.1016/j.synthmet.2006.04.010
19.
19.Y. Wu, Z. H. Xu, and B. Hu, Phys. Rev. B 75, 035214 (2007).
http://dx.doi.org/10.1103/PhysRevB.75.035214
20.
20.F. L. Bloom, W. Wagemans, M. Kemerich, and B. Koopmans, Phys. Rev. Lett. 99, 257201 (2007).
http://dx.doi.org/10.1103/PhysRevLett.99.257201
21.
21.B. Hu and Y. Wu, Nature Mater. 6, 985 (2007).
http://dx.doi.org/10.1038/nmat2034
22.
22.P. A. Bobbert, T. D. Nguyen, F. W. A. van Oost, B. Koopmans, and M. Wohlgenannt, Phys. Rev. Lett. 99, 216801 (2007).
http://dx.doi.org/10.1103/PhysRevLett.99.216801
23.
23.J. D. Bergeson, V. N. Prigodin, D. M. Lincoln, and A. J. Epstein, Phys. Rev. Lett. 100, 067201 (2008).
http://dx.doi.org/10.1103/PhysRevLett.100.067201
24.
24.B. Hu, L. Yang, and M. Shao, Adv. Mater. (Weinheim, Ger.) 21, 1500 (2009).
http://dx.doi.org/10.1002/adma.200802386
25.
25.F. J. Wang, H. Bässler, and Z. V. Vardeny, Phys. Rev. Lett. 101, 236805 (2008).
http://dx.doi.org/10.1103/PhysRevLett.101.236805
26.
26.Z. Xu and B. Hu, Adv. Funct. Mater. 18, 2611 (2008).
http://dx.doi.org/10.1002/adfm.200800331
27.
27.M. S. Meruvia and I. A. Hümmelgen, Adv. Funct. Mater. 16, 459 (2006).
http://dx.doi.org/10.1002/adfm.200500302
28.
28.C. H. Yang, L. R. Huang, Y. K. Chih, W. C. Lin, F. J. Liu, and T. L. Wang, Polymer 48, 3237 (2007).
http://dx.doi.org/10.1016/j.polymer.2007.04.013
29.
29.W. J. da Silva, I. A. Hümmelgen, R. M. Q. Mello, and D. Ma, Appl. Phys. Lett. 93, 053301 (2008).
http://dx.doi.org/10.1063/1.2967731
30.
30.W. J. da Silva, thesis, Universidade Federal do Paraná, 2009.
31.
31.A. R. V. Benvenho, J. P. M. Serbena, R. Lessmann, I. A. Hümmelgen, R. M. Q. Mello, R. W. C. Li, J. H. Cuvero, and J. Gruber, Braz. J. Phys. 35, 1016 (2005).
http://dx.doi.org/10.1590/S0103-97332005000600018
32.
32.R. Toniolo and I. A. Hümmelgen, Macromol. Mater. Eng. 289, 311 (2004).
http://dx.doi.org/10.1002/mame.200300329
33.
33.E. H. Rhoderick, Metal-Semiconductor Contacts (Clarendon, Oxford, 1978).
34.
34.W. J. da Silva, I. A. Hümmelgen, and R. M. Q. Mello, J. Mater. Sci.: Mater. Electron. 20, 123 (2009).
http://dx.doi.org/10.1007/s10854-008-9645-x
35.
35.J. L. Alonso, J. C. Ferrer, M. A. Cotarelo, F. Montilla, and S. F. de Avila, Thin Solid Films 517, 2729 (2009).
http://dx.doi.org/10.1016/j.tsf.2008.10.145
36.
journal-id:
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/25/10.1063/1.3159825
Loading
/content/aip/journal/apl/94/25/10.1063/1.3159825
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/94/25/10.1063/1.3159825
2009-06-25
2014-07-22

Abstract

Bipolar devices constructed using thick tris-(8-hydroxyquinoline) aluminum thin films sandwiched between a thick sulfonated polyaniline hole-injection electrode and electron-injection electrode show very high (up to ) magnetocurrent values. True-hole-only and true-electron-only -based devices that make use of Si as charge carrier collecting electrode, and as electron injecting electrode or Au as hole injecting electrode, are also proposed, prepared, and characterized. In these true-single-carrier devices magnetocurrent is not observed. This result provides strong evidence that bipolar injection is a necessary condition for very high magnetocurrent observation in .

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/94/25/1.3159825.html;jsessionid=58mhb0f7cc0fk.x-aip-live-03?itemId=/content/aip/journal/apl/94/25/10.1063/1.3159825&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true
This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Very high magnetocurrent in tris-(8-hydroxyquinoline) aluminum-based bipolar charge injection devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/25/10.1063/1.3159825
10.1063/1.3159825
SEARCH_EXPAND_ITEM