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Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures
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View: Figures


Image of FIG. 1.
FIG. 1.

PL spectra at of ensembles of (top spectra) and 0.4% (bottom spectra) wires (width 500 nm) for light polarization perpendicular (, solid lines) and parallel (, dotted lines) to the wire axis. Bottom-left inset: sketch of the sample patterning. is the angle the analyzer (arrowed line) forms with the wire axis (dashed line). Top-right inset: polar plot of the modulus of the polarization degree vs .

Image of FIG. 2.
FIG. 2.

(a) PL imaging of 5.0, 2.0, 1.0, 0.5, and wires; white corresponds to maximum intensity. (b) Spatial map of the PL polarization degree on the same area shown in (a) for ; white indicates maximum . Note the higher value of at the wire borders. (c) Line scan of (energy-integrated over the GaAsN PL band) along after a vertical binning. (d) -PL spectra recorded at the center (top spectra) and border (bottom spectra) of a wire for light polarization parallel and orthogonal to the wire axis. The vertical dashed line highlights the relative shift of the PL peak positions.

Image of FIG. 3.
FIG. 3.

(a) 3D distribution of the strain field, calculated along the direction perpendicular to the axis of a wire embedded between hydrogenated barriers (structure deformation is 100 times exaggerated). (b) Line scan of along the normal to the wire axis (thin black line, left axis; reversed ordinate). Note the agreement with the experimental polarization degree (thick line, right axis).

Image of FIG. 4.
FIG. 4.

(a) Normalized -PL spectra of a wire at for light polarization parallel and perpendicular to the wire axis. Note the relative shift of the peaks. (b) Wire width, , dependence of the calculated stress perpendicular (solid line, ) and parallel (dotted line, ) to the axis of a wire embedded between hydrogenated . was calculated at the wire center. (c) Dependence of on measured at the wire center at 77 K (symbols). The solid line is a theoretical prediction combining finite-element simulations and optical selection rules.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures