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Ultrafast release and capture of carriers in InGaAs/GaAs quantum dots observed by time-resolved terahertz spectroscopy
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10.1063/1.3158958
/content/aip/journal/apl/94/26/10.1063/1.3158958
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/26/10.1063/1.3158958
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Carrier release and capture processes in photoexcited QDs. CS—conducting state, and GS—QD GS. (b) Schematic of InGaAs/GaAs QD SESAM sample studied in this work. (c) Small signal reflectivity and room-temperature optical emission spectra at 800 nm excitation of the studied QD SESAM.

Image of FIG. 2.
FIG. 2.

(a) Dynamics of photoinduced sheet conductivity at resonant optical excitation of QD GS at 1024 nm, with the pump fluence . (b) Maximum of traces as a function of pump fluence for 1024 nm excitation. Solid line: Fit to the saturable absorption function with saturation fluence .

Image of FIG. 3.
FIG. 3.

(a) Solid lines: Dynamics of photoinduced sheet conductivity of a QD SESAM at optical excitation of barriers at 800 nm, with the pump fluence varied between . Dashed line: for a bulk GaAs sample at 800 nm excitation with the pump fluence of ; (b) 10% decay time constant of the QD SESAM traces in (a), as a function of 800 nm pump fluence. Inset: Normalized traces for QD GS and barrier excitation with the pump wavelength and fluence of 1024 nm and , and 800 nm and , respectively.

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/content/aip/journal/apl/94/26/10.1063/1.3158958
2009-06-29
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrafast release and capture of carriers in InGaAs/GaAs quantum dots observed by time-resolved terahertz spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/26/10.1063/1.3158958
10.1063/1.3158958
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