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Schematic of an all-nitride trilayer that can be thermally driven to transform locally into a SV structure consisting of immersed in a paramagnetic metal/semiconducting surrounding.
Left panel: evolution of the UPS spectrum of a 5 nm thick film with increasing annealing temperatures. The film was grown on Fe(100) and the spectra have been recorded with photons of 21.2 eV. The inset shows the DOS at the Fermi level. Right panels: evolution with annealing temperature of the area corresponding, respectively, to the (filled dots) and metallic Cu (empty dots) components of the XPS core level for films of two selected thicknesses (2 and 8 nm).
LEED patterns for (a) on Fe(001), (b) a 32 Å thick FeN film on Cu(001) grown at 300 K, (c) this film after annealing at 715 K, and (d) reference thin film. Notice that (c) and (d) are identical. Lower left panel: room temperature Kerr magnetization curves for 1.7 (filled circles) and 2.4 nm (empty circles) thick films. Lower right panel: core level for the FeN film deposited at 300 K and after heating to 715 K. The last one is identical to the corresponding spectrum for a thick film.
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