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Recovery time scales in a reversed-biased quantum dot absorber
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10.1063/1.3159838
/content/aip/journal/apl/94/26/10.1063/1.3159838
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/26/10.1063/1.3159838
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental GS carrier relaxation for different reverse biased voltages (black) and fitting (red) with Eqs. (1) and (2): (a) 0 V, ; (b) 1 V, ; and (c) 2 V, . The other fitting parameters are: and . The inset illustrates , , , and which are introduced in the text.

Image of FIG. 2.
FIG. 2.

Experimental GS carrier relaxations (black), fitting with Eqs. (1) and (2) (blue), and fitting (red) with: [(a), (c), and (e)] Eq. (5) for the fast recovery stage; [(b), (d), and (f)] Eq. (8) for the slow recovery stage. The fitting parameters were: [(a) and (b)] ; [(c) and (d)] ; and [(e) and (f)] . The other parameters are the same as in Fig. 1.

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/content/aip/journal/apl/94/26/10.1063/1.3159838
2009-06-30
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Recovery time scales in a reversed-biased quantum dot absorber
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/26/10.1063/1.3159838
10.1063/1.3159838
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