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(a) Out-of-plane strain depth distributions of 120 keV proton irradiated Si/SiGe/Si with various fluences from to , and the strain value from the as-grown Si/SiGe/Si is also shown for comparison. The profiles are deduced from HRXRD measurements. (b) Evolution of strain in Si/SiGe/Si as a function of proton irradiation fluence.
SIMS profiles showing Ge and H in the 20 and 120 keV proton irradiated Si/SiGe/Si.
Plot of the relative strain relaxation vs the amount of trapped hydrogen in the buried SiGe layer for 120 keV proton irradiated Si/SiGe/Si.
Random and  channeling spectra (only high channels showing Ge signal) of 20 and 120 keV proton irradiated Si/SiGe/Si with a fluence of . The spectra obtained from as-grown Si/SiGe/Si are also shown for comparison. The peak positions of channeled spectra are shifted to those of random spectra considering a decrease in energy loss for channeled incident ions.
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