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Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation
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10.1063/1.3167814
/content/aip/journal/apl/94/26/10.1063/1.3167814
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/26/10.1063/1.3167814
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Figures

Image of FIG. 1.
FIG. 1.

(a) Out-of-plane strain depth distributions of 120 keV proton irradiated Si/SiGe/Si with various fluences from to , and the strain value from the as-grown Si/SiGe/Si is also shown for comparison. The profiles are deduced from HRXRD measurements. (b) Evolution of strain in Si/SiGe/Si as a function of proton irradiation fluence.

Image of FIG. 2.
FIG. 2.

SIMS profiles showing Ge and H in the 20 and 120 keV proton irradiated Si/SiGe/Si.

Image of FIG. 3.
FIG. 3.

Plot of the relative strain relaxation vs the amount of trapped hydrogen in the buried SiGe layer for 120 keV proton irradiated Si/SiGe/Si.

Image of FIG. 4.
FIG. 4.

Random and [100] channeling spectra (only high channels showing Ge signal) of 20 and 120 keV proton irradiated Si/SiGe/Si with a fluence of . The spectra obtained from as-grown Si/SiGe/Si are also shown for comparison. The peak positions of channeled spectra are shifted to those of random spectra considering a decrease in energy loss for channeled incident ions.

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/content/aip/journal/apl/94/26/10.1063/1.3167814
2009-07-01
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/26/10.1063/1.3167814
10.1063/1.3167814
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