Full text loading...
(a) Schematic cross section of the GeOI TFETs with the epitaxial junction at the source/channel interface and effective gate length of 60 nm and (b) SEM cross section, where the angled, epitaxial source can clearly be seen.
Band diagrams illustrating the electron interband tunneling in a TFET for various gate voltages and . Dashed lines show the bands for . (a) For the barrier for interband tunneling is large. (b) For (-mode) electrons tunnel from the valence band in the -source into the conduction band in the channel. (c) For (-mode) electrons tunnel from the valence band in the channel to the conduction band in the -drain.
Measured characteristics of a TFET with and for at for both - and -modes of operation. Subthreshold slopes for -mode operation are listed. Simulated equipotential lines at the corner source/channel junction are shown in the inset for a configuration analogous to the TFET, with and the source grounded. The channel is assumed to be an equipotential at . The lines are denser in the vicinity of the junction, where the electric field is maximum.
Measured room temperature characteristics of the TFET in -mode operation for , 100, and 500 mV.
Article metrics loading...