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Layer structure of an AlN/GaN HEMT grown on sapphire.
dc characteristics of an AlN/GaN HEMT with no oxygen plasma exposure (top), and the gate area of the HEMT exposed to 24 s of oxygen plasma (bottom).
Threshold voltage, drain current at zero gate bias voltage and maximum drain current as a function of oxygen plasma exposure time.
Gate current of an AlN/GaN HEMT for several oxygen plasma exposure times.
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