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Development of enhancement mode AlN/GaN high electron mobility transistors
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10.1063/1.3168648
/content/aip/journal/apl/94/26/10.1063/1.3168648
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/26/10.1063/1.3168648
/content/aip/journal/apl/94/26/10.1063/1.3168648
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/content/aip/journal/apl/94/26/10.1063/1.3168648
2009-06-30
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Development of enhancement mode AlN/GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/26/10.1063/1.3168648
10.1063/1.3168648
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