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Development of enhancement mode AlN/GaN high electron mobility transistors
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10.1063/1.3168648
/content/aip/journal/apl/94/26/10.1063/1.3168648
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/26/10.1063/1.3168648
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Layer structure of an AlN/GaN HEMT grown on sapphire.

Image of FIG. 2.
FIG. 2.

dc characteristics of an AlN/GaN HEMT with no oxygen plasma exposure (top), and the gate area of the HEMT exposed to 24 s of oxygen plasma (bottom).

Image of FIG. 3.
FIG. 3.

Threshold voltage, drain current at zero gate bias voltage and maximum drain current as a function of oxygen plasma exposure time.

Image of FIG. 4.
FIG. 4.

Gate current of an AlN/GaN HEMT for several oxygen plasma exposure times.

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/content/aip/journal/apl/94/26/10.1063/1.3168648
2009-06-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Development of enhancement mode AlN/GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/26/10.1063/1.3168648
10.1063/1.3168648
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