1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at : Broadening of the fundamental transition
Rent:
Rent this article for
USD
10.1063/1.3073718
/content/aip/journal/apl/94/3/10.1063/1.3073718
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/3/10.1063/1.3073718
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Room temperature CER spectra in the vicinity of the ground state transition for GaInNAsSb/GaNAs QWs grown at 20X V-to-III ratio in BEP and annealed at for various time ranges.

Image of FIG. 2.
FIG. 2.

Room temperature CER spectra in the vicinity of the ground state transition for GaInNAsSb/GaNAs QWs grown at 11X V-to-III ratio in BEP and annealed at for various time ranges.

Image of FIG. 3.
FIG. 3.

Room temperature CER spectra in the vicinity of the ground state transition for GaInNAsSb/GaNAs QWs grown at 11X V-to-III ratio in BEP and annealed at for various time ranges.

Image of FIG. 4.
FIG. 4.

parameter (broadening parameter) for the transition.

Loading

Article metrics loading...

/content/aip/journal/apl/94/3/10.1063/1.3073718
2009-01-22
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5–1.65 μm: Broadening of the fundamental transition
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/3/10.1063/1.3073718
10.1063/1.3073718
SEARCH_EXPAND_ITEM