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Colossal resistance switching effect in Pt/spinel-MgZnO/Pt devices for nonvolatile memory applications
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10.1063/1.3073858
/content/aip/journal/apl/94/3/10.1063/1.3073858
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/3/10.1063/1.3073858

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of thin films deposited on substrates, (a) and (b) , respectively. The open reversed triangle and open square denote cubic rocksalt phase and spinel phase, respectively. The inset shows typical surface morphology image of thin films.

Image of FIG. 2.
FIG. 2.

behavior of memory cell in semilog scale based on devices. The arrows indicate the sweeping direction.

Image of FIG. 3.
FIG. 3.

Typical curves of switching memory cells of devices plotted in log-log scale. The color lines show the fitting results in both HRS and LRS.

Image of FIG. 4.
FIG. 4.

behavior of memory cell in semilog scale based on devices.

Tables

Generic image for table
Table I.

Characteristics of Pt/MgZnO/Pt devices with different Mg contents.

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/content/aip/journal/apl/94/3/10.1063/1.3073858
2009-01-22
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Colossal resistance switching effect in Pt/spinel-MgZnO/Pt devices for nonvolatile memory applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/3/10.1063/1.3073858
10.1063/1.3073858
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