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Characterization of the material as a function of annealing temperature: (a) intensities of the broad and narrow Raman bands (RB and RN) and of cw PL at 800 nm (in arbitrary units), (b) position and width of the RN, and (c) relative amounts of bulk Si and suboxide (SiO) provided by XPS.
Characterization of the material annealed at as a function of the O/Si ratio : (a) absorption coefficient, Raman band intensity (in arbitrary units), and the amount of bulk Si provided by XPS. (b) Pulsed and cw PL intensity. (c) Lifetime and stretching parameter of the pulsed PL at 750 nm.
cw PL QY as a function of the amount of bulk Si provided by XPS for samples annealed at . The data emphasize the relative change in QY, which is obtained with accuracy of approximately ±20%. The vertical scale presents a rough estimate of the order of magnitude for the absolute value. The line guides the eyes.
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