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Basal plane dislocation reduction in epitaxy by growth interruptions
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10.1063/1.3070530
/content/aip/journal/apl/94/4/10.1063/1.3070530
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/4/10.1063/1.3070530
/content/aip/journal/apl/94/4/10.1063/1.3070530
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/content/aip/journal/apl/94/4/10.1063/1.3070530
2009-01-30
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/4/10.1063/1.3070530
10.1063/1.3070530
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