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Basal plane dislocation reduction in epitaxy by growth interruptions
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10.1063/1.3070530
/content/aip/journal/apl/94/4/10.1063/1.3070530
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/4/10.1063/1.3070530

Figures

Image of FIG. 1.
FIG. 1.

[(a)–(c)] UVPL images of BPDs, (d) 3D schematic of BPD spanning full epi, and (e) 3D schematic of BPD that turns into TED at interrupt. Image (a) is after the initial growth, (b) is after an ex situ interrupt and subsequent growth, sample 427 in Table I, and (c) is an overlay of (a) and (b). T and C are the labels for turned and continuing BPDs, respectively.

Image of FIG. 2.
FIG. 2.

UVPL image of in situ sample 914 showing two BPDs that are converted to TEDs and three BPDs that continue through the whole epitaxial thickness.

Tables

Generic image for table
Table I.

Temperature, propane flow, and duration of the ex situ and in situ interrupts with BPD conversion results. Ex situ interrupts are at room temperature (RT).

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/content/aip/journal/apl/94/4/10.1063/1.3070530
2009-01-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/4/10.1063/1.3070530
10.1063/1.3070530
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