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Influence of surface structure on the phonon-assisted emission process in the ZnO nanowires grown on homoepitaxial films
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10.1063/1.3072349
/content/aip/journal/apl/94/4/10.1063/1.3072349
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/4/10.1063/1.3072349
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM [(a) and (d)] and TEM images [low magnification: [(b) and (e)] and high resolution: [(c) and (f)]] of ZnO NWs grown on two different types of substrates. The insets of (c) and (f) show fast Fourier transformation patterns corresponding to the lattice fringes from the NWs.

Image of FIG. 2.
FIG. 2.

(a) PL intensity ratios and spectra (inset) at room temperature, (b) PL contour plot of temperature-dependent defect emissions, and (c) PL spectra (at ) of the defect emissions of ZnO NWs grown on two different substrates. (d) Temperature dependence of intensity of the defect emission band. The solid lines show the results of parameter fitting to Eq. (1).

Image of FIG. 3.
FIG. 3.

Temperature-dependent PL spectra of UV emissions showing the excitons and their LO-phonon replicas for ZnO NWs grown on two different substrates (see text for details).

Image of FIG. 4.
FIG. 4.

(a) Temperature dependence of FX peak position. The solid lines are the fitting curves of the experimental data by Varshni’s formula [Eq. (2)]. (b) Lorentzian curves for the room-temperature UV emissions showing the contributions from the FX, F1, and F2 emission curves. The sums of the three Lorentzians are indicated by the solid curves (red).

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/content/aip/journal/apl/94/4/10.1063/1.3072349
2009-01-26
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of surface structure on the phonon-assisted emission process in the ZnO nanowires grown on homoepitaxial films
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/4/10.1063/1.3072349
10.1063/1.3072349
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