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Evidence of the Ge nonreactivity during the initial stage of SiGe oxidation
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10.1063/1.3076092
/content/aip/journal/apl/94/4/10.1063/1.3076092
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/4/10.1063/1.3076092
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Figures

Image of FIG. 1.
FIG. 1.

Relative stability of dimer units containing one oxygen atom inserted into the first monolayer of the silicon substrate. The two cases of pure Si and SiGe alloy (1 Ge on the Si surface) are considered. The most stable structure in each case is taken as reference. Energy values are in eV. Grey circles are surface Si atoms, small black circles are Si atoms of the subsurface, oxygen atoms are in white circles, and gray squares are germanium or silicon atoms depending on the case studied. Full lines are the dimer bonds and the dashed lines correspond to the backbonds. The formation energy reference is −3.66 eV for Si and −3.78 eV for SiGe.

Image of FIG. 2.
FIG. 2.

Same as in Fig. 1 but with two oxygen atoms inserted into the first monolayer of the silicon substrate. The formation energy reference is −7.28 eV for Si and −7.45 eV for SiGe.

Image of FIG. 3.
FIG. 3.

Same as in Fig. 1 but with three oxygen atoms inserted into the first monolayer of the silicon substrate. The formation energy reference is −10.81 eV for Si and −10.86 eV for SiGe.

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/content/aip/journal/apl/94/4/10.1063/1.3076092
2009-01-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evidence of the Ge nonreactivity during the initial stage of SiGe oxidation
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/4/10.1063/1.3076092
10.1063/1.3076092
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