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Temperature and electric field dependence of the carrier emission processes in a quantum dot-based memory structure
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10.1063/1.3076126
/content/aip/journal/apl/94/4/10.1063/1.3076126
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/4/10.1063/1.3076126
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Capacitance hysteresis curve. (b) Method to pointwise measure the emission transients. Step 1: filling the QDs, step 2: first capacitance measurement at maximum hysteresis opening, step 3: discharging the QDs with high reverse bias applied (erasing), step 4: second capacitance measurement.

Image of FIG. 2.
FIG. 2.

Selection of erase time transients at different applied bias voltages at 100 K. As the erase pulse width decreases, a decrease in the hysteresis opening is observed. The maximum reverse bias voltage is limited by the diode breakthrough voltage.

Image of FIG. 3.
FIG. 3.

Emission rate for 50% discharging against the inverse of the electric field. A pure tunneling emission process has a linear dependence (left gray area), whereas pure thermal activation is independent of the electric field (right gray area), the area in between is governed by phonon-assisted tunneling.

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/content/aip/journal/apl/94/4/10.1063/1.3076126
2009-01-29
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature and electric field dependence of the carrier emission processes in a quantum dot-based memory structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/4/10.1063/1.3076126
10.1063/1.3076126
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