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Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a layer as gate dielectric
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10.1063/1.3077188
/content/aip/journal/apl/94/4/10.1063/1.3077188
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/4/10.1063/1.3077188
/content/aip/journal/apl/94/4/10.1063/1.3077188
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/content/aip/journal/apl/94/4/10.1063/1.3077188
2009-01-30
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/4/10.1063/1.3077188
10.1063/1.3077188
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