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Ti concentration profile of the implanted layer from SIMS measurements. The dashed line corresponds to an as-implanted sample and the solid line to a sample annealed with two laser pulses of .
Wafer effective carrier lifetime vs carrier injection level in samples implanted with Ti doses of , , and . (a) Measured with the implanted layer located at the surface impinged by the flash light. (b) Measured with the back surface of the wafer impinged by the flash light.
Ti concentration in samples implanted with a dose of that were PLM annealed with different laser energy densities or number of pulses.
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