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Performance and reliability improvement of HfSiON gate dielectrics using chlorine plasma treatment
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10.1063/1.3078277
/content/aip/journal/apl/94/4/10.1063/1.3078277
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/4/10.1063/1.3078277
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Figures

Image of FIG. 1.
FIG. 1.

curves of HfSiON with and without chlorine plasma treatment. The chlorine plasma-treated samples show lower EOT and lower gate leakage current density (inset) at the same time. The EOTs of the control, HK, and mid-HK samples are 2.2, 2.0, and 1.9 nm, respectively.

Image of FIG. 2.
FIG. 2.

HRTEM images of high- gate stacks. Amorphous silicon was deposited on top of TaCN gate electrode and has been crystallized during postannealing. No physical thickness change was observed with and without chlorine plasma treatment.

Image of FIG. 3.
FIG. 3.

The SIMS depth profiling of a poly- gate stack. The carbon peaks in high- gate stacks decrease with chlorine plasma treatment.

Image of FIG. 4.
FIG. 4.

characteristics of each sample measured at . Note the improved characteristics with chlorine plasma treatment.

Image of FIG. 5.
FIG. 5.

NBTI as a function of stress time measured at . The improved NBTI for the optimal chlorine plasma treatment indicates that chlorine plasma treatment on HfSiON shows defect-curing effects on high- gate stacks. The gate length of the samples is .

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/content/aip/journal/apl/94/4/10.1063/1.3078277
2009-01-30
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Performance and reliability improvement of HfSiON gate dielectrics using chlorine plasma treatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/4/10.1063/1.3078277
10.1063/1.3078277
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