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Surface leakage reduction in narrow band gap type-II antimonide-based superlattice photodiodes
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10.1063/1.3078282
/content/aip/journal/apl/94/5/10.1063/1.3078282
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/5/10.1063/1.3078282

Figures

Image of FIG. 1.
FIG. 1.

The dark current densities of diameter diodes measured at 77 K are shown for all samples. An improvement in the ICP-etched sidewall surface quality is revealed by their lower regardless of passivation technique. The bias-dependent QE is shown in the inset.

Image of FIG. 2.
FIG. 2.

The inverse is shown as a function of P/A for diodes between 100 and in diameter at 77 K. The high surface resistivity of ICP-polyimide is revealed by its near zero slope. The inset equation is used to extract surface resistivity.

Image of FIG. 3.
FIG. 3.

Dark current density temperature dependent measurements of 320 and diameter diodes for the ICP-etched samples are shown at 50 mV reverse bias. Since the samples vary only in processing technique, deviation from the bulk diffusion trend for each curve indicates the onset of surface leakage.

Tables

Generic image for table
Table I.

Electrical figures of merit measured at 77 K.

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/content/aip/journal/apl/94/5/10.1063/1.3078282
2009-02-03
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface leakage reduction in narrow band gap type-II antimonide-based superlattice photodiodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/5/10.1063/1.3078282
10.1063/1.3078282
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