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Simultaneous generation and detection of ultrashort voltage pulses in low-temperature grown GaAs with below-bandgap laser pulses
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10.1063/1.3078288
/content/aip/journal/apl/94/5/10.1063/1.3078288
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/5/10.1063/1.3078288
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Experimental setup. (b) Schematic of the spectral absorption of LT GaAs. The dotted line marks the fundamental bandgap while the red arrow marks the wavelength of the pump and probe beams. (c) Side view of the CPW. The sampling technique is sensitive to electric field components oriented along the [001] direction.

Image of FIG. 2.
FIG. 2.

(a) Time trace of voltage pulse measured after propagating 0.5 mm on the CPW. Inset: corresponding power spectrum. (b) Voltage pulse measured with main probe pulse (black dotted) and with the reflection of the probe pulse (red dashed, compare with inset). The blue solid line shows the voltage pulse measured with the main probe pulse that was convolved with the impulse function of the EO sampling technique.

Image of FIG. 3.
FIG. 3.

(a) Time-integrated photocurrent vs center wavelength of excitation pulse for 20 V bias field and 35 mW pump power (black squares). EO signal of a 5 V reference bias applied to the CPW vs center wavelength of probe pulse (red triangles). (b) Wavelength dependence of measured voltage pulse amplitude (black squares) and of time-integrated photocurrent multiplied with EO reference signal (red triangles).

Image of FIG. 4.
FIG. 4.

(a) Measured time traces for a bias voltage of 0.6 and 20 V and a pump energy of 260 pJ. Inset: amplitude of measured voltage pulses vs bias voltage. (b) Measured time traces for an excitation energy of the pump pulses of 13 and 400 pJ and a bias of 20 V. Inset: amplitude of measured voltage pulses vs excitation energy.

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/content/aip/journal/apl/94/5/10.1063/1.3078288
2009-02-03
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simultaneous generation and detection of ultrashort voltage pulses in low-temperature grown GaAs with below-bandgap laser pulses
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/5/10.1063/1.3078288
10.1063/1.3078288
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