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Anisotropic optical response of InAs/InP quantum dot avalanche photodiodes
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10.1063/1.3079674
/content/aip/journal/apl/94/5/10.1063/1.3079674
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/5/10.1063/1.3079674
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical RT dark (solid line) and photocurrents (broken line) of the InAs/InP QD photodiodes. Insets illustrate the cross-sectional view of the mesa structure, the associated multiplication curve, the cross-section TEM showing one of the QD layers, and the corresponding AFM image of the QDs.

Image of FIG. 2.
FIG. 2.

dc photoresponsivity plotted as a function of reverse bias voltage at 1550 nm illumination. Inset illustrates the conduction and valence energy band edges of the InAs/InP structure under reverse bias.

Image of FIG. 3.
FIG. 3.

Normalized photocurrent spectra plotted as a function of photon energy under TE-polarized illumination at various reverse bias voltages. Inset illustrates the QD band edge profile and the hh1-e1 and hh2-e2 absorptions.

Image of FIG. 4.
FIG. 4.

(a) Energy separation between hh1-e1 and hh2-e2, and (b) hh1-e1 hh2-e2 photocurrent peak intensities ratio as a function of reverse bias. Broken lines are guide to the eyes.

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/content/aip/journal/apl/94/5/10.1063/1.3079674
2009-02-06
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anisotropic optical response of InAs/InP quantum dot avalanche photodiodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/5/10.1063/1.3079674
10.1063/1.3079674
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