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Typical RT dark (solid line) and photocurrents (broken line) of the InAs/InP QD photodiodes. Insets illustrate the cross-sectional view of the mesa structure, the associated multiplication curve, the cross-section TEM showing one of the QD layers, and the corresponding AFM image of the QDs.
dc photoresponsivity plotted as a function of reverse bias voltage at 1550 nm illumination. Inset illustrates the conduction and valence energy band edges of the InAs/InP structure under reverse bias.
Normalized photocurrent spectra plotted as a function of photon energy under TE-polarized illumination at various reverse bias voltages. Inset illustrates the QD band edge profile and the hh1-e1 and hh2-e2 absorptions.
(a) Energy separation between hh1-e1 and hh2-e2, and (b) hh1-e1 hh2-e2 photocurrent peak intensities ratio as a function of reverse bias. Broken lines are guide to the eyes.
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