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Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition
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10.1063/1.3064166
/content/aip/journal/apl/94/6/10.1063/1.3064166
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3064166
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM images and dots size distribution of InN islands grown by (a) the PM and (b) the FME at .

Image of FIG. 2.
FIG. 2.

Four representative Raman spectra for InN islands of different sizes grown by the FME [(a) and (b)] and the PM [(c) and (d)] methods. The average island height (base diameter) for (a), (b), (c), and (d) are 47 (202), 38 (180), 22 (310), and 11 (320) nm, respectively. A spectrum taken from a 300 nm InN film is also included.

Image of FIG. 3.
FIG. 3.

(a) The measured Raman frequency as a function of aspect ratio. The solid (hollow and half-filled) symbols are data obtained from FME (PM) samples grown at different temperatures. The hollow circles with error bars are from PM grown islands with , 15, and 20 s. The two half-filled circles are from different regions of the sample with . The dotted line is the exponential fitting curve. The solid line is the average in-plane strain in disk-shaped islands calculated from 3D finite-element simulations. (b) Simulated distribution of in the plane of an uncapped disk-shape island.

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/content/aip/journal/apl/94/6/10.1063/1.3064166
2009-02-09
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3064166
10.1063/1.3064166
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