Full text loading...
curve for a device under AM1.5G illumination. is , is 0.42 V, and fill factor is 36%; total efficiency is 2.6%. Device structure consists of layers of nanoparticles (inset).
Absorbance data before and after sintering. Before sintering, the absorption is blueshifted, signifying a bigger band gap and quantum confinement. (Inset) Band structure of bulk CdTe and CdSe, as well as ITO and Au or Al electrodes. Solid lines are for bulk band edges, while dotted lines denote band edges calculated with an effective mass approximation assuming quantum confinement and parabolic bands.
curve for CdTe-only and CdTe/CdSe devices under illumination with similar thicknesses of 420 nm. For CdTe-only device: is , is 0.50 V and fill factor is 51%; total efficiency is 1.1%. For CdTe/CdSe: is , is 0.48 V and fill factor is 35%; total efficiency is 0.6%.
EQE data corresponding to the curves in Fig. 3. The CdTe/CdSe device is plotted on the left axis, while the CdTe-only device is plotted on the right. The difference in intensity of the two spectra is different because the CdTe/CdSe device was old and had been exposed to oxygen before the EQE data were taken. The data are meant to show the relative spectral response.
curves of CdTe-CdSe devices with both gold and aluminum electrodes. (Inset) Side view of nanoparticle film after sintering. The distance between the white cursors is 91 nm, which corresponds roughly with the CdSe layer. Below this is the CdTe layer, which does not have the same structure as the CdSe layer.
Article metrics loading...