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Realization of a high mobility dual-gated graphene field-effect transistor with dielectric
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/content/aip/journal/apl/94/6/10.1063/1.3077021
2009-02-12
2014-09-20

Abstract

We fabricate and characterize dual-gated graphenefield-effect transistors using as top-gate dielectric. We use a thin Alfilm as a nucleation layer to enable the atomic layer deposition of . Our devices show mobility values of over at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.

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Scitation: Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3077021
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