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Interfacial reactions at Al/LiF and LiF/Al
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FIG. 1.

(a) SRPES spectra of Al core levels with Al deposited on LiF. (b) SRPES spectra of Li core levels with Al deposited on LiF. (c) XPS spectra of F core levels with Al deposited on LiF.

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FIG. 2.

(a) SRPES spectra of Al core levels with LiF deposited on Al. (b) Difference photoemission spectra of Al core levels with LiF deposited on Al. (c) SRPES spectra of Li core levels with LiF deposited on Al. (d) XPS spectra of F core levels with LiF deposited on Al.

Image of FIG. 3.

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FIG. 3.

characteristics of devices with or without 0.8 nm thick LiF of the symmetrical unipolar device, .

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/content/aip/journal/apl/94/6/10.1063/1.3077167
2009-02-10
2014-04-19

Abstract

High-resolution synchrotron radiation photoemission spectroscopy was used to investigate the chemical properties of Al–LiF interfaces. An electronic state appeared at the Al/LiF interface with a binding energy 4.8 eV higher than that of the metallic Al core level, but the state was hardly found to be present at the LiF/Al interface. This indicates that intensive chemical reaction could occur at the Al/LiF interface, while the reaction occurring at the LiF/Al interface would be weak. This result explains well the unsymmetrical electron injection from different sides of the symmetrical device of indium-tin-oxide\Al\LiF\tris(8-hydroxyquinoline) aluminum\LiF\Al showing unsymmetrical current-voltage characteristics.

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Scitation: Interfacial reactions at Al/LiF and LiF/Al
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3077167
10.1063/1.3077167
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