1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
f
Interfacial reactions at Al/LiF and LiF/Al
Rent:
Rent this article for
Access full text Article
/content/aip/journal/apl/94/6/10.1063/1.3077167
1.
1.L. S. Hung, C. W. Tang, and M. G. Mason, Appl. Phys. Lett. 70, 152 (1997).
http://dx.doi.org/10.1063/1.118344
2.
2.X. Z. Wang, Z. T. Xie, X. J. Wang, Y. C. Zhou, W. H. Zhang, X. M. Ding, and X. Y. Hou, Appl. Surf. Sci. 253, 3930 (2007).
http://dx.doi.org/10.1016/j.apsusc.2006.08.023
3.
3.Q. T. Le, L. Yan, Y. L. Gao, M. G. Mason, D. J. Giesen, and C. W. Tang, J. Appl. Phys. 87, 375 (2000).
http://dx.doi.org/10.1063/1.371870
4.
4.M. G. Mason, C. W. Tang, L. S. Hung, P. Raychaudhuri, J. Madathil, D. J. Giesen, L. Yan, Q. T. Le, Y. Gao, S. T. Lee, L. S. Liao, L. F. Cheng, W. R. Salaneck, D. A. dos Santos, and J. L. Bredas, J. Appl. Phys. 89, 2756 (2001).
http://dx.doi.org/10.1063/1.1324681
5.
5.H. Heil, J. Steiger, S. Karg, M. Gastel, H. Ortner, and H. Von Seggernetc, J. Appl. Phys. 89, 420 (2001).
http://dx.doi.org/10.1063/1.1331651
6.
6.R. Schlaf, B. A. Parkinson, P. A. Lee, K. W. Nebesny, G. Jabbour, B. Kippelen, N. Peyghambarian, and N. R. Armstrong, J. Appl. Phys. 84, 6729 (1998).
http://dx.doi.org/10.1063/1.369000
7.
7.K. Ihm, T. H. Kang, K. J. Kim, and C. C. Hwang, Appl. Phys. Lett. 83, 2949 (2003).
http://dx.doi.org/10.1063/1.1616977
8.
8.S. D. Wang, M. K. Fung, S. L. Lai, S. W. Tong, C. S. Lee, and S. T. Lee, J. Appl. Phys. 94, 169 (2003).
http://dx.doi.org/10.1063/1.1576893
9.
9.C. I. Wu, G. R. Lee, and T. W. Pi, Appl. Phys. Lett. 87, 212108 (2005).
http://dx.doi.org/10.1063/1.2135376
10.
10.C. W. Zou, B. Sun, W. H. Zhang, G. D. Wang, P. S. Xu, Q. P. Wang, F. Q. Xu, and H. B. Pan, Nucl. Instrum. Methods Phys. Res. A 548, 574 (2005).
http://dx.doi.org/10.1016/j.nima.2005.03.176
11.
11.Y. Q. Zhan, Z. H. Xiong, H. Z. Shi, S. T. Zhang, Z. Xu, G. Y. Zhong, J. He, J. M. Zhao, Z. J. Wang, E. Obbard, H. J. Ding, X. J. Wang, X. M. Ding, W. Huang, and X. Y. Hou, Appl. Phys. Lett. 83, 1656 (2003).
http://dx.doi.org/10.1063/1.1601675
12.
12.G. E. McGuire, G. K. Schweitzer, and T. A. Carlson, Inorg. Chem. 12, 2450 (1973).
http://dx.doi.org/10.1021/ic50128a045
13.
13.R. Nyholm, J. N. Andersen, J. F. van Acker, and M. Qvarford, Phys. Rev. B 44, 10987 (1991).
http://dx.doi.org/10.1103/PhysRevB.44.10987
14.
14.C. Shen, A. Kahn, and J. Schwartz, J. Appl. Phys. 89, 449 (2001).
http://dx.doi.org/10.1063/1.1333740
15.
journal-id:
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3077167
Loading
/content/aip/journal/apl/94/6/10.1063/1.3077167
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/94/6/10.1063/1.3077167
2009-02-10
2014-10-01

Abstract

High-resolution synchrotron radiation photoemission spectroscopy was used to investigate the chemical properties of Al–LiF interfaces. An electronic state appeared at the Al/LiF interface with a binding energy 4.8 eV higher than that of the metallic Al core level, but the state was hardly found to be present at the LiF/Al interface. This indicates that intensive chemical reaction could occur at the Al/LiF interface, while the reaction occurring at the LiF/Al interface would be weak. This result explains well the unsymmetrical electron injection from different sides of the symmetrical device of indium-tin-oxide\Al\LiF\tris(8-hydroxyquinoline) aluminum\LiF\Al showing unsymmetrical current-voltage characteristics.

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/94/6/1.3077167.html;jsessionid=282mqb3ts9ad6.x-aip-live-03?itemId=/content/aip/journal/apl/94/6/10.1063/1.3077167&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true
This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfacial reactions at Al/LiF and LiF/Al
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3077167
10.1063/1.3077167
SEARCH_EXPAND_ITEM