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Electronic structure and carrier dynamics in InAs/InP double-cap quantum dots
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10.1063/1.3078290
/content/aip/journal/apl/94/6/10.1063/1.3078290
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3078290
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Experimental and (b) calculated energies and dipole lengths of the two confined states and of the DC-QD. The error bars of the experimental data correspond to the full width at half maximum of the Gaussian fit of the tr-PL spectra. Experimental data taken from Ref. 10.

Image of FIG. 2.
FIG. 2.

(a) Sketch of the radiative and nonradiative mechanisms used to described the exciton dynamics and (b) experimental tr-PL curves under high excitation density for the first excited state (, circles) and the fundamental state (, squares). The fit extracted from the rate equation model is shown with continuous line.

Image of FIG. 3.
FIG. 3.

Experimental rise time ( in our model) of the fundamental state as a function of the excitation intensity (full circles). The fit extracted from the rate equation model is shown with a continuous line.

Image of FIG. 4.
FIG. 4.

Intradot relaxation between and confined states extracted from the dynamic model and reported as a function of the excitation intensity.

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/content/aip/journal/apl/94/6/10.1063/1.3078290
2009-02-12
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic structure and carrier dynamics in InAs/InP double-cap quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3078290
10.1063/1.3078290
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