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Current-voltage characteristic of the heterostructure-based device. The top-left inset shows the schematic diagram for the device, and the bottom-right inset shows the characteristic of the ITO contact on film.
(a) RT EL spectra for the heterostructure applied with different forward bias voltages of 4.0, 4.5, 4.8, 5.2, and 5.4 V. The upper inset shows the CCD camera images of the light emissions corresponding to the EL spectra, and the right inset shows the deconvolution of EL spectrum 5. (b) Dependence of integrated spectral intensity on aging time.
Cross-sectional HRTEM image of the heterostructure.
Schematic energy-band diagrams for the heterostructure under appropriately high forward bias voltage (a) and reverse bias voltage (b). The oxygen-vacancy-related visible emissions are also illustrated in (a).
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