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TEM image of a SiNW oxidized at for 1 min. The bandlike contrast is associated with the NW bending.
Dependence of the oxide shell thickness on the remaining Si core radius after RTO at (a) and (b) for different exposure times. Solid lines are the linear fits to experimental data and are shown to guide the eye only. Horizontal dashed lines represent oxide thicknesses on Si (111) reference samples.
Average oxide growth rate vs oxidation time for (squares) and (circles). The inset shows the average oxide thickness vs oxidation time. In both figures, solid and open symbols correspond to SiNWs and planar Si(111) reference samples, respectively. The error bars represent the standard deviation of data shown in Fig. 2.
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