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Rapid thermal oxidation of silicon nanowires
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10.1063/1.3079395
/content/aip/journal/apl/94/6/10.1063/1.3079395
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3079395
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TEM image of a SiNW oxidized at for 1 min. The bandlike contrast is associated with the NW bending.

Image of FIG. 2.
FIG. 2.

Dependence of the oxide shell thickness on the remaining Si core radius after RTO at (a) and (b) for different exposure times. Solid lines are the linear fits to experimental data and are shown to guide the eye only. Horizontal dashed lines represent oxide thicknesses on Si (111) reference samples.

Image of FIG. 3.
FIG. 3.

Average oxide growth rate vs oxidation time for (squares) and (circles). The inset shows the average oxide thickness vs oxidation time. In both figures, solid and open symbols correspond to SiNWs and planar Si(111) reference samples, respectively. The error bars represent the standard deviation of data shown in Fig. 2.

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/content/aip/journal/apl/94/6/10.1063/1.3079395
2009-02-11
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rapid thermal oxidation of silicon nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3079395
10.1063/1.3079395
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