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Dependence of energy band offsets at interface on nitrogen concentration
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10.1063/1.3079396
/content/aip/journal/apl/94/6/10.1063/1.3079396
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3079396
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The Te core-level and valence band spectra for 100 nm amorphous NGST. (b) The Si core-level and valence band spectra for . The square and circle symbols represent the core-level (left) and valence band (right) spectra, respectively. The VBM is extrapolated from the intersection point between the leading edge of the valence band spectrum and the base line. The energy difference between the core level and the VBM from the undoped sample to that of a doping content of differs by 0.3 eV.

Image of FIG. 2.
FIG. 2.

The Te (square symbols) and Si (circle symbols) core-level spectra for ultrathin NGST films on . Energy differences between the two core levels are also shown.

Image of FIG. 3.
FIG. 3.

(a) The valence band offset and conduction band offset between NGST and . With increasing nitrogen concentration, decreases linearly while increases linearly. (b) A schematic energy band diagram of the energy band offsets. Energy values shown are in units of eV and are taken with respect to the valence band of the undoped NGST. Top and bottom edges of each rectangle represent and , respectively.

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/content/aip/journal/apl/94/6/10.1063/1.3079396
2009-02-09
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dependence of energy band offsets at Ge2Sb2Te5/SiO2 interface on nitrogen concentration
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3079396
10.1063/1.3079396
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