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(a) The Te core-level and valence band spectra for 100 nm amorphous NGST. (b) The Si core-level and valence band spectra for . The square and circle symbols represent the core-level (left) and valence band (right) spectra, respectively. The VBM is extrapolated from the intersection point between the leading edge of the valence band spectrum and the base line. The energy difference between the core level and the VBM from the undoped sample to that of a doping content of differs by 0.3 eV.
The Te (square symbols) and Si (circle symbols) core-level spectra for ultrathin NGST films on . Energy differences between the two core levels are also shown.
(a) The valence band offset and conduction band offset between NGST and . With increasing nitrogen concentration, decreases linearly while increases linearly. (b) A schematic energy band diagram of the energy band offsets. Energy values shown are in units of eV and are taken with respect to the valence band of the undoped NGST. Top and bottom edges of each rectangle represent and , respectively.
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