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Realization of dual-gated core-shell nanowire field effect transistors with highly doped source and drain
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10.1063/1.3079410
/content/aip/journal/apl/94/6/10.1063/1.3079410
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3079410
/content/aip/journal/apl/94/6/10.1063/1.3079410
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/content/aip/journal/apl/94/6/10.1063/1.3079410
2009-02-12
2014-07-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Realization of dual-gated Ge–SixGe1−x core-shell nanowire field effect transistors with highly doped source and drain
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3079410
10.1063/1.3079410
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