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[(a) and (b)] Scheme of ion implantation into the sacrificial layer. The principle resulting structure is displayed in (c) and (d). The left column displays the full film treatment. In the right column the case of laterally distributed ion implantation is shown. A TEM cross section of the implanted/nonimplanted interface is displayed in (e).
Magnetization loops with field along (a) the initial easy and (b) hard axis of anisotropy before and after the homogeneous implantation process in completely unmasked films.
(a) Calculated stress close to the implanted/nonimplanted interface as derived from FEM calculation of the induced stress distribution close to the interface. For better visualization the image is stretched along the -axis. Calculated (b) and (c) corresponding measured hysteresis curves from a strip structure (strip width of and period of ).
Kerr images of a sample with a single implanted (i)/nonimplanted (n.i.) interface (a) and strip structures (strip with ) with the same domain configuration in (b) transverse and (c) longitudinal sensitivity. The reduced magneto-optical contrast in the implanted stripes in (c) is due to a lowering of the reflection value and depolarization effects caused by the implantation into the -layer. The corresponding distribution of is sketched in (a).
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