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NiSiGe nanocrystals for nonvolatile memory devices
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10.1063/1.3080201
/content/aip/journal/apl/94/6/10.1063/1.3080201
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3080201
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The plane-view and cross-section TEM micrographs of the annealed NiSi [(a) and (c)] and NiSiGe [(b) and (d)] film.

Image of FIG. 2.
FIG. 2.

(a) The XPS spectra, (b) Raman spectroscopy, and (c) EDS of the NiSiGe film after the thermal annealing.

Image of FIG. 3.
FIG. 3.

High-frequency (1 MHz) characteristics of the MOIOS structures: (a) with NiSi NCs and (b) NiSiGe NCs as the trapping layer of the memory device.

Image of FIG. 4.
FIG. 4.

Retention characteristic of the (a) NiSi and (b) NiSiGe NCs memory device.

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/content/aip/journal/apl/94/6/10.1063/1.3080201
2009-02-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: NiSiGe nanocrystals for nonvolatile memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3080201
10.1063/1.3080201
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