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The plane-view and cross-section TEM micrographs of the annealed NiSi [(a) and (c)] and NiSiGe [(b) and (d)] film.
(a) The XPS spectra, (b) Raman spectroscopy, and (c) EDS of the NiSiGe film after the thermal annealing.
High-frequency (1 MHz) characteristics of the MOIOS structures: (a) with NiSi NCs and (b) NiSiGe NCs as the trapping layer of the memory device.
Retention characteristic of the (a) NiSi and (b) NiSiGe NCs memory device.
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