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Lower-temperature crystallization of CoFeB in MgO magnetic tunnel junctions by using Ti capping layer
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10.1063/1.3080208
/content/aip/journal/apl/94/6/10.1063/1.3080208
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3080208
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RA dependence of TMR ratio with capping layer materials as a parameter. MTJs were annealed at for .

Image of FIG. 2.
FIG. 2.

Annealing temperature dependence of MR ratio with capping layer materials as a parameter. The MR ratio at RA of was interpolated from the relationship between RA and MR ratio.

Image of FIG. 3.
FIG. 3.

Depth profile of MTJs with (a) Ta, (b) Ru, (c) Cu, and (d) Ti capping layer after and before annealing at 270, 320, and . The solid line, dotted line, dashed line, and circle indicate boron, cobalt, capping layer material, and Mg, respectively. Intensity of each material is normalized by maximum intensity of as-deposited sample.

Image of FIG. 4.
FIG. 4.

Cross-sectional TEM images of MTJs with (a) Ta and (b) Ti capping layer. MTJs were annealed at for .

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/content/aip/journal/apl/94/6/10.1063/1.3080208
2009-02-11
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lower-temperature crystallization of CoFeB in MgO magnetic tunnel junctions by using Ti capping layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3080208
10.1063/1.3080208
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