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Effect of doping on the amorphous to microcrystalline transition in a hydrogenated amorphous silicon under hydrogen plasma treatment
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10.1063/1.3080661
/content/aip/journal/apl/94/6/10.1063/1.3080661
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3080661
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

High energy part of the imaginary part of the pseudodielectric function of intrinsic, -, and -type films: (a) before and after, (b) , (c) , and (d) of plasma exposure. The inset is a schematic of the multilayer optical model used to fit the SE measurements after the plasma treatment.

Image of FIG. 2.
FIG. 2.

Time evolution of (a) the thickness and (b) the hydrogen excess during the plasma exposure. The segments indicate the maximum error bars and the curves are provided as guides for the eyes.

Image of FIG. 3.
FIG. 3.

Time evolution of the characteristics of the grown layer vs the plasma exposure time: (a) the crystalline fraction and (b) the fraction of voids at the bottom side and (c) the crystalline fraction and (d) the fraction of voids at the top side, and (e) the Si amount in the layer. The segments indicate the maximum error bars and the curves are provided as guides for the eyes.

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/content/aip/journal/apl/94/6/10.1063/1.3080661
2009-02-10
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of doping on the amorphous to microcrystalline transition in a hydrogenated amorphous silicon under hydrogen plasma treatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3080661
10.1063/1.3080661
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