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Aluminum gettering of iron in silicon as a problem of the ternary phase diagram
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View: Figures


Image of FIG. 1.
FIG. 1.

Simulation of AlG of Fe using the experimentally determined segregation coefficient. Solid lines show the Fe concentration at a depth of ; dashed lines show the Fe solubility in equilibrium with according to Ref. 14. (a) One-step gettering at for 50 min. It should be noted that the final concentration has been reached within 2% after 15 min. (b) Two-step gettering consisting of AlG at for 25 min followed by ramping to within 13 min and final AlG there for another 35 min. It should be noted that the Fe concentration remains below the Fe solubility in Si with respect to during the whole process.

Image of FIG. 2.
FIG. 2.

Arrhenius plots of the segregation coefficient (triangles) and the apparent segregation coefficient (squares), which relates to directly measured quantities by . Here and are the thicknesses of the Si sample and of the evaporated Al layer, respectively, and denotes the initial Fe concentration in the Si sample. The agreement of values obtained from one-step (open symbols) and two-step (closed symbols) AlG shows their independence of the path to equilibrium and of the Fe concentration in the investigated concentration range. Solid and dashed lines show least-square fits of the respective data, which yield and , respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Aluminum gettering of iron in silicon as a problem of the ternary phase diagram