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(a) curves of the GaN layer before and after F ion implantation. The depth profile of fluorine after implantation is also shown for comparison. (b) plots for as-grown and as-implanted samples.
(a) curves of the fluorine implanted samples after annealing in atmosphere at from 30 s to 72 h. (b) SIMS profiles of fluorine implanted into GaN layer before and after annealing.
plots of the samples before and after annealing.
curves of the as-grown, as-implanted, and thermal annealed samples. The curve of the sample annealed for 20 min is not shown for clarity. It should be located between the samples annealed for 30 s and 2 h.
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