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Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy
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10.1063/1.3081019
/content/aip/journal/apl/94/6/10.1063/1.3081019
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3081019
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) curves of the GaN layer before and after F ion implantation. The depth profile of fluorine after implantation is also shown for comparison. (b) plots for as-grown and as-implanted samples.

Image of FIG. 2.
FIG. 2.

(a) curves of the fluorine implanted samples after annealing in atmosphere at from 30 s to 72 h. (b) SIMS profiles of fluorine implanted into GaN layer before and after annealing.

Image of FIG. 3.
FIG. 3.

plots of the samples before and after annealing.

Image of FIG. 4.
FIG. 4.

curves of the as-grown, as-implanted, and thermal annealed samples. The curve of the sample annealed for 20 min is not shown for clarity. It should be located between the samples annealed for 30 s and 2 h.

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/content/aip/journal/apl/94/6/10.1063/1.3081019
2009-02-11
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3081019
10.1063/1.3081019
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