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Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application
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10.1063/1.3081042
/content/aip/journal/apl/94/6/10.1063/1.3081042
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3081042
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SAND and (b) HRTEM cross-sectional image of as-deposited W-NDs film produced with W composition of .

Image of FIG. 2.
FIG. 2.

HRTEM cross-sectional images of W-NDs films with PDA at various temperatures. The W composition of sputter target is . (a) W-NDs film with PDA at . (b) W-NDs film with PDA at .

Image of FIG. 3.
FIG. 3.

(a) The density and average size of W-ND as a function of W composition of sputter target. The PDA was performed at . (b) HRTEM cross-sectional image of W-NDs film produced with W composition of and PDA.

Image of FIG. 4.
FIG. 4.

High-frequency curves with sweeping gate voltage of ±10 V (a) and hysteresis memory window as a function of sweeping gate bias (b) for capacitors with and without W-NDs. The W-ND density is .

Image of FIG. 5.
FIG. 5.

Retention characteristics at zero gate bias and room temperature for W-NDs MOS memory capacitor. The program/erase was done at ±8 and ±10 V for 1 s.

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/content/aip/journal/apl/94/6/10.1063/1.3081042
2009-02-10
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3081042
10.1063/1.3081042
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